5720~5860 MHz 130W C-Band RF Power Amplifier Module for Wireless Applications

• Customization: Available
• Usage: RF Communication System
• Type: Wireless
• Model NO.: SW-PS-57205860-51C
• Support Network: RF Communication Network
• Information content: RF Signal
• Condition: New
• Operating Frequency: 5720-5860 MHz
• Power (Output): 130 W
• P-Sat Power Output: 50.4-51.3 dBm
• Power Gain Flatness: ±1 Db
• Model: Sw-PS-57205860-51c
• Working Temp.: -40°C to +60°C
• Application: RF Communication Systems
• Name: RF Power Amplifier
• Key: Solid State Amplifier
• Transport Package: Standard Packing
• Specification: 200× 120× 30mm
• Trademark: SWT
• Origin: Nanjing, China
• Package Size: 60.00cm * 40.00cm * 20.00cm
• Package Gross Weight: 2.000kg

Product Description

Customized C-Band 5720-5860MHz 130W RF Power Amplifier Module with Adjustable Gain

Key Specifications

Parameter	Specification
Frequency Range	5720–5860 MHz
Saturated Output Power (P-Sat)	50.4–51.3 dBm (≥110 W across the band)
Operating Voltage	20–30 VDC, 24 VDC typ.
Operating Current	18 A typ. @ 24 VDC
RF Connectors (Input / Output)	N-Female
Dimensions (L × W × H)	200 × 120 × 30 mm*
Operating Housing Temperature	-40°C to +60°C

*Excluding external connectors.

Product Overview

The SW-PS-57205860-51C is a 5720–5860 MHz, 130 W-class RF power amplifier module designed for RF system integration. Customized configurations can be developed according to specific RF, electrical, mechanical and interface requirements.

RF & Electrical Specifications

Typical performance at +24 VDC, +25°C, in a 50 Ω system. Output power across the band: 110–135 W. Minimum guaranteed output power: 110 W.

Parameter	Min	Typ	Max	Unit
Operating Frequency	5720	—	5860	MHz
Saturated Output Power (P-Sat)	50.4	—	51.3	dBm
Gain Flatness	—	±1	—	dB
Gain Adjustment Range	26	31	35	dB
Gain Adjustment Step	0.5	1	1.5	dB
Operating Voltage	20	24	30	VDC
Operating Current	—	18	—	A

Mechanical, Interface & Control

Mechanical & Interface

Parameter	Specification
Dimensions (L × W × H)	200 × 120 × 30 mm*
RF Input / Output	N-Female
DC / Control Connector	D-SUB 7W2
Mounting	3-8 Thru Hole
Cooling	Baseplate Conduction
Optional Cooling	Heatsink Available
Weight	≤ 3 kg

*Excluding external connectors.

Pin Definition

Pin	Definition	Description
A1	+VDC	+24 V
A2	GND	Ground
1	GND	Ground
2	GND	Ground
3	485A	Control and Monitoring
4	485B	Control and Monitoring
5	GND	Ground

Environmental & Protection

Parameter	Specification
Operating Temperature (Housing)	-40°C to +60°C
Storage Temperature	-55°C to +85°C
Humidity	0–100%
PA Baseplate Shutoff	+65°C

Custom RF Power Amplifier Solutions

Customized configurations can be developed according to specific RF, electrical, mechanical and interface requirements.

RF Requirements

Electrical & Control

Mechanical & Interface

· Frequency Range

· Output Power

· Gain / Gain Adjustment

· Power Supply

· Control Interface

· RF Connector

· Mechanical Dimensions

· Cooling Configuration

Submit Your RF Requirements

For technical evaluation, please provide:

RF & Electrical

Interface & Project Details

· Frequency Range

· Required Output Power

· Gain Requirement

· Supply Voltage

· RF Connector

· Mechanical / Installation Requirements

· Quantity

· Other Special Requirements

Testing & Verification

Each unit is individually tested according to the agreed customer requirements. Test items are defined based on the project specifications, and a Shinewave test report is provided for verification.

About Shinewave

Founded in 2008, Shinewave specializes in RF and microwave products, including power amplifiers, active and passive components, and RF subsystems. Based in Nanjing, we support project-based RF product development, manufacturing and customized solutions.

Production Workshop

Micro Assembly

RF Testing